Sub-Terahertz Emission from Field-Effect Transistors

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation

Strained-Si modulation doped field effect transistors have been studied as detectors of 0.2 THz and 1.6 THz electromagnetic radiation at room temperature. The difference in the gate voltage dependences for 0.2 THz and 1.6 THz radiation and spatial pattern of the transistor response to focused 1.6 THz radiation confirms that the mechanism of detection is linked to the excitations of the two-dime...

متن کامل

Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors

Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors F. Teppea,∗, C. Consejo, J. Torres, B. Chenaud, P. Solignac, S. Fathololoumi, Z.R. Wasilewski, M. Zholudev, N. Dyakonova, D. Coquillat, A. El Fatimy, P. Buzatu, C. Chaubet and W. Knap L2C, UMR N◦ 5221 CNRS, Université Montpellier 2, GIS-TERALAB, 34095 Montpellier, France IES, UMR N◦ 5214 CNRS, Univ...

متن کامل

Terahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors

Plasma oscillations in nanometer field effect transistors are used for detection and generation of electromagnetic radiation of THz frequency. Following first observations of resonant detection in 150 nm gate length GaAs HEMT, we describe recent observations of room temperature detection in nanometer Si MOSFETs, resonant detection in GaN/AlGaN HEMTs and improvement of room temperature detection...

متن کامل

Helicity sensitive terahertz radiation detection by field effect transistors

Related Articles Time-resolved hyperspectral fluorescence spectroscopy using frequency-modulated excitation J. Appl. Phys. 112, 013109 (2012) Potential distribution in channel of thin-film transistors Appl. Phys. Lett. 101, 013504 (2012) Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers Appl...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Acta Physica Polonica A

سال: 2017

ISSN: 0587-4246,1898-794X

DOI: 10.12693/aphyspola.132.335